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APTGT100A170T
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 NTC2
VCES = 1700V IC = 100A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile Max ratings 1700 150 100 200 20 560 200A @ 1600V Unit V A V W
May, 2005 1-5 APTGT100A170T - Rev 0
E1 OUT Q2 G2
E2
0/VBU S
NTC1
G2 E2
OUT
VBUS
0/VBUS
OUT
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT100A170T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 500 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 100A R G = 4.7
Min
Typ 9 0.36 0.3 370 40 650 180 400 50 800 300 32 31
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1700V
50% duty cycle
IF = 100A IF = 100A VR = 900V
di/dt =800A/s
100 1.8 1.9 385 490 28 46
2.2
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT100A170T - Rev 0
APTGT100A170T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.22 0.39 150 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
3400 -40 -40 -40 1.5
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT100A170T - Rev 0
May, 2005
APTGT100A170T
Typical Performance Curve
Output Characteristics (VGE =15V) Output Characteristics 200 TJ = 125C 160 IC (A) 120 80 40 0
VGE =20V
200 175 150
IC (A)
T J=25C
125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4
TJ=125C
VGE =13V VGE=15V V GE=9V
0
1
2
3 V CE (V)
4
5
Transfert Characteristics 200 175 150 E (mJ) 125 IC (A) 100 75 50 25 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 100 87.5 75 E (mJ) 62.5 50 37.5 25 12.5 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 40
Er
Eoff
Energy losses vs Collector Current 100
VCE = 900V VGE = 15V RG = 4.7 T J = 125C Eon
T J=25C
80
TJ =125C
60 40
Eoff
TJ =125C
Er
20 0 10 11 12 13 0 25 50
Er
75 100 125 150 175 200 IC (A)
Reverse Bias Safe Operating Area 250
VCE = 900V VGE =15V IC = 100A TJ = 125C
Eon
200 IC (A) 150 100 50 0 0 400 800 1200 1600 2000 VCE (V)
VGE =15V TJ=125C RG =4.7
0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT
Single Pulse 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT100A170T - Rev 0
May, 2005
APTGT100A170T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 20 40 60 80 IC (A) 100 120 140
hard switching ZVS ZCS VCE =900V D=50% RG=4.7 TJ =125C TC=75C
Forward Characteristic of diode 200 175 150 125 IC (A) 100 75 50 25 0 0 0.5 1 1.5 V F (V) 2 2.5 3
TJ=125C T J=125C TJ =25C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.5 0.3 0.9 0.7
Diode
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT100A170T - Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein
May, 2005

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